1.Breakdown voltage: Often the trade-off is between breakdown voltage rating and on- resistance because increasing the breakdown voltage by incorporating a thicker and lower doped drift region leads to higher on-resistance.
2.On-resistance: Higher current rating lowers the on-resistance due to greater numbers of parallel cells. This increases overall capacitance and slows down the speed.
3.Rise and fall times for switching between on and off states.
4.Safe-operating area (from thermal dissipation and "latch-up" consideration)
5.Thermal resistance: This is actually an often-ignored but extremely important parameter from practical system design point of view. Semiconductors do not perform well at elevated temperature but due to large current conduction, all power semiconductor device heat up. Therefore it needs to be cooled by removing that heat continuously. Packaging interface provides the path between the semiconductor device and external world to channelize the heat outside. Generally, large current devices have large die and packaging surface area and lower thermal resistance.
2.On-resistance: Higher current rating lowers the on-resistance due to greater numbers of parallel cells. This increases overall capacitance and slows down the speed.
3.Rise and fall times for switching between on and off states.
4.Safe-operating area (from thermal dissipation and "latch-up" consideration)
5.Thermal resistance: This is actually an often-ignored but extremely important parameter from practical system design point of view. Semiconductors do not perform well at elevated temperature but due to large current conduction, all power semiconductor device heat up. Therefore it needs to be cooled by removing that heat continuously. Packaging interface provides the path between the semiconductor device and external world to channelize the heat outside. Generally, large current devices have large die and packaging surface area and lower thermal resistance.
Thanks for the information. Wiki zindabad :)
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